A correctly calculated MOSFET turn-ON process ensures that the device is switched ON with optimal efficiency.

The MOSFET’s increased power density saves PCB space in these systems by reducing the number of components needed in parallel. In addition, as a p-channel device, the SQJA81EP enables simpler. IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A. Anmbest 5PCS DC 5V-36V 15A(Max 30A) 400W Dual High-Power MOSFET Trigger Switch Drive Module 0-20KHz PWM Adjustment Electronic Switch Control Board Motor Speed Control Lamp Brightness Control. 4.4 out of 5 stars 76. 99 ($2.00/Item) Get it as soon as Wed, Mar 24. Transistor (MOSFET) is based on the original field-effect transistor introduced in the 70s. Figure 1 shows the device schematic, transfer characteristics and device symbol for a MOSFET. The invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of. 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

While designing MOSFET based circuits you might have wondered what is the correct way of turning ON a MOSFET? Or simply what is the minimum voltage that should be applied across gate/source of the device to switch it ON perfectly?

Although for many digital systems this might not be an issue, 5V systems such as DSPs, FPGAs, and Arduinos require boosting of their outputs for optimal switching condition for the connected MOSFET.

And in these situations the designer begins looking at the specifications of the MOSFET to get the threshold voltage data. The designer assumes that the MOSFET would turn ON and change state when this threshold level is crossed.

However this may be not as simple as it may appear to be.

What is Threshold Voltage V_GS(th)

First of all we must realize that the threshold voltage, denoted as V_GS(th) is not for circuit designers to worry about.

To be precise, it is the gate voltage which causes the drain current of the MOSFET to cross a threshold level of 250 μA, and this is tested under conditions that might never normally transpire in practical applications.

During certain analysis, a constant 5V is used for the above mentioned testing of the device. But this test is normally implemented with the gate and the drain of the device connected or shorted with each other. You can easily get this information in the datasheet itself, so there's nothing mysterious about this test.

The table above indicates the threshold levels and the relevant test conditions for an example MOSFET.

For a desired application the designer might be worried about a dreaded situation known as 'induced' gate voltage, which may be a serious issue for example in a low side MOSFET of synchronous buck converter.

As discussed earlier, here too we must understand that crossing the threshold V_GS(th) level may not force the device to run into a shoot-through breakdown condition. This level actually tells the designer regarding the threshold at which the MOSFET just begins turning ON and is not a situation where things just end altogether.

It may be advisable that while the MOSFET is in the switched OFF condition the gate voltage is maintained below the V_GS(th) level , to prevent current leakage. But while turning it ON this parameter may be simply ignored.

Transfer Characteristic Curve

You will find another curve diagram named transfer characteristics in MOSFET datasheets explaining its turn ON behavior in response to increasing gate voltage.

To be precise this may be more related to current variation analysis with respect to gate voltage and device case temperature. In this analysis the V_DS is held at a fixed level but high level, around 15V, which may not be revealed in the datasheet specs.

If we refer to the curve as shown above we realize that for 20 Amp drain current, 3.2 V gate-to-source voltage may not be adequate.

The combination would result in a VDS of 10 V typically with a dissipation of 200 watts.

Transfer curve data can be useful for MOSFETs operated in the linear range, however the curve data may have less significance for MOSFETs in switching applications.

Output Characteristics

The curve which reveals the actual data regarding the fully ON condition of a MOSFET is known as the output curve as shown below:

Here, for the various levels of V_GS the forward drop of the MOSFET is measured as a function of current. Device engineers use this curve data to confirm the optimal level of gate voltage.

For each level of gate voltage that ensures a full switch ON of the MOSFET [R_DS(on)], we get a range of voltage drops (V_GS) across drain-to-source having strictly linear response with drain current. The range begins from zero and upwards.

For lower gate voltages (V_GS), when the drain current is increased, we find the curve losing the linear response, moving through the 'knee' and then going flat.

The above curve details provide us the complete output characteristics for a range of gate voltages from 2.5 V to 3.6 V.

MOSFET users may normally contemplate this as the linear function. However, in contrast device engineers may prefer to pay more attention towards the gray region of the graph which suggests the current saturation region for applied gate voltage.

It reveals the current data that has touched the saturation point or the saturation limit. At this point, if the V_DS is increased will result in a marginal increase in the current, but a small increase in drain current may lead to a much larger V_DS.

For increased gate voltage levels, which enable the MOSFET to turn ON fully, the green shaded area will show us the operating point for the process, indicated as resistive (or Ohmic) region.

Please note that the curves here show the typical values only, and does not include any minimum or maximum boundaries.

While operating at lower ambient temperatures, the device will require higher gate voltage to stay in the resistive region, which may go upward at the rate of 0.3 %/°C.

What is MOSFET RDS(on)

When device engineers have to encounter the output characteristics of the MOSFET, they will essentially want to learn about the R_{DS (on)} of the device with reference to the specific operating conditions.

Generally, this can be a mix of V_GS and I_DS across the area where the curve has deviated from the straight line into the portion indicated by the gray shade.

Considering the example discussed above, a gate voltage of 3.1 V with an initial current of 10 Amps, the engineers will know that the R_DS(on) will tend to be greater than the estimated value. Having said this, do we expect the MOSFET manufacturer to furnish an approximate data regarding this?

With both the quantities V_DS and I_DS readily obtainable in the curve it may become too enticing, and is often surrendered into, to divide the two quantities at the resultant R_DS(on).

However, sadly we do not have an R_DS(on) for the assessment here. It seems to be unavailable for the mentioned situations since for any section of the load line representing a resistance has to cross through the origin in a linear manner.

That said, it may be possible to simulate the load line in an aggregated form like a non-linear resistance.

At the minimum, this will guarantee that any understanding of practical working is sustained at the origin (0, 0).

Gate Charge Curve Characteristics

It is the gate charge curve data that actually gives us a real hint regarding the turn ON specs of the MOSFET as shown in the figure below:

Although the above curve is a standard inclusion in all MOSFET datasheets, the underlying indications are seldom comprehended by the MOSFET user.

Moreover, the modern advancement in the MOSFET layouts, such as trench and shielded gates, call for a revised addressing of the data.

For example, the specification named 'gate-charge' may appear slightly misleading by itself.

The linear and divided sections of the curve do not appear like voltage charging a capacitor, regardless of how much non-linear value it may exhibit.

To be precise, the gate charge curve signifies an associated data of two non parallel capacitors, having dissimilar magnitudes and carrying different voltage levels.

Mosfet Diagram

In theory, the functional capacitance as witnessed from MOSFET gate terminal is defined with the equation:

C_iss = C_gs + C_gd

where C_iss = gate capacitance, C_gs = gate source capacitance, C_gd = gate drain capacitance

Although it may appear rather simple to measure this unit and specify in the datasheets, it must be noted that the term C_iss is actually not a real capacitance.

It may be completely wrong to think that a MOSFET is turned ON merely through a voltage applied on the 'the gate capacitance C_iss'.

As indicated in the above figure, just before a MOFET turns ON, the gate capacitance has no charge, but the capacitance at gate-drain C_gd possesses a negative charge which needs to be eliminated.

Both these capacitance have a non-linear nature and their values largely vary as the applied voltages vary.

Hence, it is important to note that it is the stored charges of the MOSFET that determines its switching characteristics, and not the capacitance value for a specific voltage level.

Since the two capacitance elements constituting C_iss have different physical attributes, they tend to get charged with dissimilar voltage levels, requiring the turn ON process of the MOSFET also to go through two stages.

The precise sequence may be different for resistive and inductive applications, but typically most practical loads being highly inductive, the process could be simulated as depicted in the following figure:

Gate Charge Timing Sequence

The gate charge timing sequences of the MOSFET can be studied from the diagram below:

It may be understood with the following explanation:

1. T0 - T1: C_gs charges from zero to V_GS(th). V_DS or I_DS does not go through any changes.
2. T1-T2, current starts rising in the MOSFET in response to the increasing gate voltage from V_GS(th) upto the plateau voltage V_gp.
3. Here, IDS increases and reaches to full load current from 0 V, although V_DS remains unaffected and constant. The associated charge is formed through the integral of C_gs from 0 V to V_gp, and Q_gs given in the datasheets.
4. T2 - T3: Observe the flat region between T2 and T3, it's called the Miller plateau.
5. Before the switch ON, C_gd charges and holds up to the supply voltage V_IN, until I_DS reaches the peak value I(load) at T2.
6. The time between period T2 and T3, the negative charge (V_IN - V_gp) gets converted into positive charge with respect to the plateau voltage V_gp.
7. This can be also visualized as the falling of the drain voltage from V_IN to around almost zero.
8. The charge involved is equal to around the C_gd integral from 0 to V_in, which is shown as Q_gd in datasheets.
9. During T3 - T4, the gate voltage climbs from V_gp to V_GS, and here we find hardly any change for V_DS and I_DS, but the effectual R_DS(on) drops slightly as the gate voltage rises. At some voltage level above V_gp, provides the manufactures enough confidence to fix the upper limit on the effective R_DS(on).

For Inductive Loads

The rise of current in MOSFET channel due to an inductive load needs to be completed before the voltage starts falling.

At the start of the plateau, the MOSFET is in the OFF state, in the presence of a high current and voltage across drain to source.

Between the time T2 and T3, a charge Q_gd is applied to the gate of the MOSFET, wherein the MOSFET characteristic transforms from constant current to constant resistance mode at the end.

When the above transition happens, no noticeable change in the gate voltage V_gp takes place.

This is the reason it is never a wise idea to relate a MOSFET turn ON process with any particular level of gate voltage.

The same may be true for the switch OFF process, which demands the same two charges (discussed earlier) to be eliminated from the gate of the MOSFET in the opposite order.

MOSFET Switching Speed

While Q_gs plus Q_gd together ensures that the MOSFET will switch ON fully, it does not tell us about how quickly this will happen.

How fast the current or voltage will switch is decided by the rate through which the charge elements at the gate are applied or removed. This is also termed as the gate drive current.

Although a fast rise and fall rate ensures lower switching losses in MOSFETs, these may also give rise to system level complications related to increased peak voltages, oscillations, and electromagnetic interference, especially during the turn off instants of the inductive load.

The linearly falling voltage depicted in the above Fig.7 manages to take a constant value of Cgd, which may hardly happen to MOSFETs in practical applications.

To be precise, the gate-drain charge C_gd for a high voltage super junction MOSFET such as SiHF35N60E exhibits a significantly high linear response, as can be seen the following figure:

The variation range that exists in the value of C_rss (reverse transfer) is more than 200:1 within the initial 100 V. Due to this the actual fall time of voltage against the gate charge curve appears more like the dashed line shown in red color in figure 7.

At higher voltages, the rise and fall times of the charges, along with their equivalent dV/dt values are more reliant on the value of C_rss, instead of the integral of the whole curve indicated as Q_gd.

When users want to compare MOSFET specs within different design environments, they should realize that MOSFET with half the Q_gd value won't necessarily feature two times faster switching rate, or 50% less switching losses.

This is because, according to the C_gd curve and its magnitude at higher voltages, it may be quite possible for a MOSFET to have a low Qgd in datasheet, but without any increase in the switching speed.

Summarizing

In actual implementation, the turning ON of a MOSFET happens through a series of processes, and not with a predetermined parameter.

Circuit designers must stop imagining that V_GS(th), or voltage levels could be used as the gate voltage for switching the MOSFET output from high to low R_DS(on).

It may be futile to think about having an R_DS(on) below or above a specific gate voltage level, since gate voltage level doesn't intrinsically decide the turn ON of a MOSFET. Rather it's the charges Q_gs and Q_gd introduced into the MOSFET that execute the job.

You may find the gate voltage rising above V_GS(th) and V_gp during the charge/discharge process but these are not so important.

Likewise, how fast todays MOSFET may turn ON or OFF can be a complex function of Q_gs or Q_gd.

For evaluating MOSFET switching speeds, especially the advanced MOSFETs, the designer must go through a comprehensive study regarding the gate charge curve and the capacitance characteristic of the device.

Reference: https://www.vishay.com/

MALVERN, Pa., April 07, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the world’s best AEC-Q101 qualified p-channel -80 V TrenchFET^® MOSFET. With the lowest on-resistance of any -80 V p-channel device, the new Vishay Siliconix SQJA81EP increases power density and efficiency in automotive applications. In the compact 5.13 mm by 6.15 mm PowerPAK^® SO-8L single package with gullwing leads, the SQJA81EP offers on-resistance down to 17.3 mΩ maximum / 14.3 mΩ typical at 10 V.

Mosfet Switch

The on-resistance of the Automotive Grade MOSFET released today is 28 % lower than the closest competing device in the DPAK package — while offering a 50 % smaller footprint — and 31 % lower than previous-generation solutions. These values translate into energy savings by minimizing power losses from conduction while allowing higher output for increased power density. Combined with the SQJA81EP’s superior gate charge down to 52 nC at 10 V — which reduces losses from gate driving — the result is best in class gate charge times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion applications.

With high temperature operation to +175 °C, the device provides the ruggedness and reliability required for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting. In addition, the SQJA81EP’s gullwing leads allow for increased automatic optical inspection (AOI) capabilities and provide mechanical stress relief for increased board-level reliability.

The device’s -80 V rating provides the safety margin required to support several popular input voltage rails, including 12 V, 24 V, and 48 V systems. The MOSFET’s increased power density saves PCB space in these systems by reducing the number of components needed in parallel. In addition, as a p-channel device, the SQJA81EP enables simpler gate drive designs that don’t require the charge pump needed by its n-channel counterparts. Lead (Pb)-free, halogen-free, and RoHS-compliant, the MOSFET is 100 % Rg and UIS tested.

Samples and production quantities of the SQJA81EP are available now, with lead times of 14 weeks.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.™ Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech™ is a trademark of Vishay Intertechnology. TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

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Designing Mosfet Circuit Tutorial Pdf

Link to product datasheet:
http://www.vishay.com/ppg?77266 (SQJA81EP)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72157718827308616

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
Email: bob.decker@redpinesgroup.com

How Does A Mosfet Work